STF11N65K3 STMicroelectronics, STF11N65K3 Datasheet - Page 8

• Manufacturer Part Number: STF11N65K3
• Description: MOSFET N-CH 650V 11.0A TO220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STF11N65K3

• Input Capacitance (ciss) @ Vds: 1180pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
8/13
Figure 14. Source-drain diode forward
(V)
V
0.7
0.6
0.8
0.5
0.4
0.3
SD
0.9
0
characteristics
1
2
3
4
5
T
J
=-50°C
6
T
T
J
7
=150°C
J
=25°C
8
Doc ID 17931 Rev 1
AM03932v1
I
SD
(A)
STF11N65K3