BLF7G27L-150P,118 NXP Semiconductors, BLF7G27L-150P,118 Datasheet - Page 11

• Manufacturer Part Number: BLF7G27L-150P,118
• Description: TRANS LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-150P,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 16.5dB
• Current Rating: 37A
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 37A
• Drain Source Voltage (max): 65V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 0.86S
• Drain Source Resistance (max): 140(Typ)@6.05Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 26%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA/IS-95
• Number Of Elements: 2
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF7G27L-150P_7G27LS-150P
Product data sheet
Document ID
BLF7G27L-150P_7G27LS-150P v.1
Revision history
Table 8.
Acronym
CCDF
CW
IS-95
ESD
LDMOS
LDMOST
N-CDMA
PAR
RF
VSWR
W-CDMA
Abbreviations
BLF7G27L-150P; BLF7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Description
Complementary Cumulative Distribution Function
Continuous Wave
Interim Standard 95
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
20101112
Release date
Rev. 1 — 12 November 2010
Data sheet status
Product data sheet
Change notice
-
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
Supersedes
-
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