BLF7G27L-150P,118 NXP Semiconductors, BLF7G27L-150P,118 Datasheet - Page 6

• Manufacturer Part Number: BLF7G27L-150P,118
• Description: TRANS LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-150P,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 16.5dB
• Current Rating: 37A
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 37A
• Drain Source Voltage (max): 65V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 0.86S
• Drain Source Resistance (max): 140(Typ)@6.05Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 26%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA/IS-95
• Number Of Elements: 2
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF7G27L-150P_7G27LS-150P
Product data sheet
Fig 7.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
17
16
15
14
13
12
0
V
Pulsed CW power gain as a function of load
power; typical values
DS
= 28 V; I
40
7.3 Pulsed CW
Dq
= 1200 mA.
80
120
(3)
(2)
(1)
BLF7G27L-150P; BLF7G27LS-150P
160
All information provided in this document is subject to legal disclaimers.
001aam993
P
L
(W)
Rev. 1 — 12 November 2010
200
Fig 8.
(%)
η
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
60
40
20
0
0
V
Pulsed CW drain efficiency as a function of
load power; typical values
DS
= 28 V; I
40
Dq
= 1200 mA.
80
Power LDMOS transistor
120
(1)
(3)
(2)
© NXP B.V. 2010. All rights reserved.
160
001aam994
P
L
(W)
200
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