BLF7G27L-150P,118 NXP Semiconductors, BLF7G27L-150P,118 Datasheet - Page 8

• Manufacturer Part Number: BLF7G27L-150P,118
• Description: TRANS LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-150P,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 16.5dB
• Current Rating: 37A
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 37A
• Drain Source Voltage (max): 65V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 0.86S
• Drain Source Resistance (max): 140(Typ)@6.05Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 26%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA/IS-95
• Number Of Elements: 2
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF7G27L-150P_7G27LS-150P
Product data sheet
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
Fig 13. Single carrier W-CDMA peak-to-average power
ACPR
(dBc)
PAR
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−20
−40
−60
5M
0
8
6
4
2
0
0
V
function of load power; typical values
0
V
ratio as a function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
(2)
(1)
(3)
Dq
Dq
40
40
= 1200 mA.
= 1200 mA.
(2)
(1)
(3)
80
80
BLF7G27L-150P; BLF7G27LS-150P
P
P
All information provided in this document is subject to legal disclaimers.
L
L
001aam997
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(W)
(W)
Rev. 1 — 12 November 2010
120
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Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
Fig 14. Single carrier W-CDMA peak output power as a
ACPR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
10M
−10
−20
−30
−40
−50
−60
−70
300
200
100
0
0
0
0
V
function of load power; typical values
V
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
40
40
= 1200 mA.
= 1200 mA.
Power LDMOS transistor
(3)
(1)
(2)
80
80
(2)
(1)
(3)
© NXP B.V. 2010. All rights reserved.
P
P
L
L
001aam998
001aan000
(W)
(W)
120
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