M52S128168A-7.5BG ELITE SEMICONDUCTOR, M52S128168A-7.5BG Datasheet - Page 24

• Manufacturer Part Number: M52S128168A-7.5BG
• Description: DRAM IC
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128168A-7.5BG

• Ic Interface Type: Parallel
• Frequency: 133MHz
• Termination Type: SMD
• Supply Voltage Max: 2.7V
• Memory Voltage, Vcc: 2.5 V
• Interface Type: Parallel
• Memory Size: 128Mbit
• Supply Voltage Min: 2.3V
• Operating Temperature Min: 0��C
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Operating Temperature Max: 70°C
• Page Size: 128MB
• Memory Case Style: FBGA
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
8. Burst Stop & Interrupted by Precharge
9. MRS
*Note:
Elite Semiconductor Memory Technology Inc.
1. t
2. Number of valid output data after burst stop : 1,2 for CAS latency = 2,3 respectiviely.
3. Write burst is terminated. t
4. DQM asserted to prevent corruption of locations D2 and D3.
5. Precharge can be issued here or earlier (satisfying t
6. PRE : All banks precharge, if necessary.
DQ ( C L 2 )
D Q ( C L 3 )
Read or write burst stop command is valid at every burst length.
MRS can be issued only at all banks precharge state.
BDL
CM D
C L K
DQ M
C M D
CL K
DQ
: 1 CLK ; Last data in to burst stop delay.
C M D
C L K
1 ) W r i t e B u r s t S t o p ( B L = 8 )
2 ) R e a d B u r s t S t o p ( B L = 4 )
1 ) M o d e R e g i s t e r S e t
W R
D 0
RD
P R E
D1
*N o t e 6
S T O P
Q 0
D2
RDL
t
R P
determinates the last data write.
Q 0
D 3
Q 1
t
B D L
* N o t e 2
S T O P
M RS
D 4
Q 1
* N o t e 1
* N o t e 2
2 C L K
D5
A C T
D Q ( C L 2 )
D Q ( CL 3 )
RAS
CM D
C L K
DQ M
C M D
CL K
DQ
min delay) with DQM.
2 ) R e a d i n t e r r u p t e d b y p r e c h a r g e ( B L = 4 )
1 ) W r i t e i n t e r r u p t e d b y p r e c h a r g e ( B L = 4 )
W R
R D
D 0
D1
t
M a s k M a s k
R D L
Q 0
P R E
Publication Date: Oct. 2007
Revision: 1.1
Q 0
Q 1
* N o t e 3
* N o t e 4
P R E
Q 1
Q 2
M52S128168A
* N o t e 5
Q 3
Q 2
Q 3
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