M52S128168A-7.5BG ELITE SEMICONDUCTOR, M52S128168A-7.5BG Datasheet - Page 40

• Manufacturer Part Number: M52S128168A-7.5BG
• Description: DRAM IC
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128168A-7.5BG

• Ic Interface Type: Parallel
• Frequency: 133MHz
• Termination Type: SMD
• Supply Voltage Max: 2.7V
• Memory Voltage, Vcc: 2.5 V
• Interface Type: Parallel
• Memory Size: 128Mbit
• Supply Voltage Min: 2.3V
• Operating Temperature Min: 0��C
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Operating Temperature Max: 70°C
• Page Size: 128MB
• Memory Case Style: FBGA
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
Read interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length = Full page
*Note : 1. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Elite Semiconductor Memory Technology Inc.
2. Burst stop is valid at every burst length.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycles”.
Publication Date: Oct. 2007
Revision: 1.1
M52S128168A
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