M52S128168A-7.5BG ELITE SEMICONDUCTOR, M52S128168A-7.5BG Datasheet - Page 34

• Manufacturer Part Number: M52S128168A-7.5BG
• Description: DRAM IC
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128168A-7.5BG

• Ic Interface Type: Parallel
• Frequency: 133MHz
• Termination Type: SMD
• Supply Voltage Max: 2.7V
• Memory Voltage, Vcc: 2.5 V
• Interface Type: Parallel
• Memory Size: 128Mbit
• Supply Voltage Min: 2.3V
• Operating Temperature Min: 0��C
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Operating Temperature Max: 70°C
• Page Size: 128MB
• Memory Case Style: FBGA
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
Page Read & Write Cycle at Same Bank @ Burst Length = 4
Note : 1. To Write data before burst read ends. DQM should be asserted three cycle prior to write command to avoid
Elite Semiconductor Memory Technology Inc.
2. Row precharge will interrupt writing. Last data input , t
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before
bus contention.
end of burst. Input data after Row precharge cycle will be masked internally.
RDL
before row precharge , will be written.
Publication Date: Oct. 2007
Revision: 1.1
M52S128168A
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