S29GL032N90TFI040 Spansion Inc., S29GL032N90TFI040 Datasheet - Page 18

• Manufacturer Part Number: S29GL032N90TFI040
• Description: IC, FLASH, 32MBIT, 90NS, TSOP-48
• Manufacturer: Spansion Inc.

Specifications of S29GL032N90TFI040

• Memory Type: Flash
• Memory Size: 32Mbit
• Ic Interface Type: CFI, Parallel
• Access Time: 90ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8.3
18
8.2.1
8.3.1
8.3.2
8.3.3
Writing Commands/Command Sequences
Page Mode Read
Write Buffer
Accelerated Program Operation
Autoselect Functions
The device is capable of fast page mode read and is compatible with the page mode Mask ROM read
operation. This mode provides faster read access speed for random locations within a page. The page size of
the device is 8 words/16 bytes. The appropriate page is selected by the higher address bits A(max)–A3.
Address bits A2–A0 in word mode (A2–A-1 in byte mode) determine the specific word within a page. This is
an asynchronous operation; the microprocessor supplies the specific word location.
The random or initial page access is equal to t
locations specified by the microprocessor falls within that page) is equivalent to t
deasserted and reasserted for a subsequent access, the access time is t
accesses are obtained by keeping the read-page addresses constant and changing the intra-read page
addresses.
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# to V
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word, instead of four. The
Program Command Sequence on page 42
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Tables
address space that each sector occupies.
Refer to the DC Characteristics table for the active current specification for the write mode. The AC
Characteristics section contains timing specification tables and timing diagrams for write operations.
Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming time than the standard programming algorithms.
The device offers accelerated program operations through the ACC function. This is one of two functions
provided by the WP#/ACC or ACC pin, depending on model number. This function is primarily intended to
allow faster manufacturing throughput at the factory.
If the system asserts V
unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for
program operations. The system would use a two-cycle program command sequence as required by the
Unlock Bypass mode. Removing V
the device to normal operation. Note that the WP#/ACC or ACC pin must not be at V
than accelerated programming, or device damage may result. WP# contains an internal pull-up; when
unconnected, WP# is at V
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system
can then read autoselect codes from the internal register (which is separate from the memory array) on
DQ7-DQ0. Standard read cycle timings (t
Autoselect Command Sequence on page 42
HH
IH
on this pin, the device automatically enters the Unlock Bypass mode, temporarily
.
S29GL-N MirrorBit
HH
from the WP#/ACC or ACC pin, depending on model number, returns
ACC
contains details on programming data to the device using both
D a t a
) apply in this mode. Refer to
for more information.
ACC
®
Flash Family
or t
CE
S h e e t
and subsequent page read accesses (as long as the
IL
, and OE# to V
ACC
Autoselect Mode on page 29
S29GL-N_01_12 October 29, 2008
or t
IH
PACC
CE
.
. Fast page mode
HH
. When CE# is
8.2
for operations other
–
8.8
Word
indicate the
and