BAS85.115 NXP Semiconductors, BAS85.115 Datasheet - Page 3

• Manufacturer Part Number: BAS85.115
• Description: DIODE, SCHOTTKY REEL 2500
• Manufacturer: NXP Semiconductors

Specifications of BAS85.115

• Diode Type: Schottky
• Forward Current If(av): 200mA
• Repetitive Reverse Voltage Vrrm Max: 30V
• Forward Voltage Vf Max: 800mV
• Forward Surge Current Ifsm Max: 5A
• Operating Temperature Range: -65°C To +125°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS85
Product data sheet
Table 6.
[1]
Table 7.
T
[1]
Symbol
R
Symbol
V
I
C
R
amb
F
th(j-a)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 September 2010
V
Conditions
I
I
I
I
I
V
F
F
F
F
F
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
= 25 V
= 1 V; f = 1 MHz
Conditions
in free air
[1]
[1]
Min
-
Min
-
-
-
-
-
-
-
Schottky barrier diode
Typ
-
Typ
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
BAS85
Max
320
Max
240
320
400
500
800
2.3
10
Unit
K/W
3 of 10
Unit
mV
mV
mV
mV
mV
μA
pF