BAS85.115 NXP Semiconductors, BAS85.115 Datasheet - Page 4

• Manufacturer Part Number: BAS85.115
• Description: DIODE, SCHOTTKY REEL 2500
• Manufacturer: NXP Semiconductors

Specifications of BAS85.115

• Diode Type: Schottky
• Forward Current If(av): 200mA
• Repetitive Reverse Voltage Vrrm Max: 30V
• Forward Voltage Vf Max: 800mV
• Forward Surge Current Ifsm Max: 5A
• Operating Temperature Range: -65°C To +125°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BAS85
Product data sheet
Fig 1.
Fig 3.
(nA)
I
(mA)
I
F(AV)
R
10
(1) T
(2) T
(3) T
10
10
10
10
250
200
150
100
10
−1
50
1
5
4
3
2
0
FR4 PCB, standard footprint
ambient temperature; derating curve
voltage; typical values
0
Average forward current as a function of
0
Reverse current as a function of reverse
amb
amb
amb
= 85 °C
= 25 °C
= −40 °C
(1)
(2)
(3)
50
10
100
20
T
amb
V
All information provided in this document is subject to legal disclaimers.
R
(V)
(°C)
mra540
mgc682
Rev. 6 — 10 September 2010
150
30
Fig 2.
Fig 4.
(mA)
(pF)
(1) T
(2) T
(3) T
C
10
I
F
10
10
d
12
10
−1
8
4
0
1
3
2
0
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
(1)
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
(2) (3)
amb
0.4
10
= 25 °C
(1) (2) (3)
Schottky barrier diode
0.8
20
© NXP B.V. 2010. All rights reserved.
V
V
R
F
(V)
(V)
BAS85
mld358
mgc681
1.2
30
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