BLA6H0912-500 NXP Semiconductors, BLA6H0912-500 Datasheet - Page 11

• Manufacturer Part Number: BLA6H0912-500
• Description: LDMOS,RF,500W,960M-1215MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLA6H0912-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 54A
• Operating Frequency Range: 858MHz To 860MHz
• Rf Transistor Case: SOT-634A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLA6H0912-500_4
Product data sheet
Document ID
BLA6H0912-500_4
Modifications:
BLA6H0912-500_3
BLA6H0912-500_2
BLA6H0912-500_1
Revision history
Table 10.
Acronym
DME
ELM
JTIDS
LDMOS
Mode-S
RF
SMD
TACAN
TCAS
VSWR
Release date
20100510
20100330
20100302
20090305
•
Section 1.3 on page
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Distance Measuring Equipment
Extended Length Message
Joint Tactical Information Distribution System
Laterally Diffused Metal-Oxide Semiconductor
Mode Select
Radio Frequency
Surface Mounted Device
TACtical Air Navigation
Traffic Collision Avoidance System
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Objective data sheet
Rev. 04 — 10 May 2010
2: the application has been corrected.
Change notice
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LDMOS avionics radar power transistor
BLA6H0912-500
Supersedes
BLA6H0912-500_3
BLA6H0912-500_2
BLA6H0912-500_1
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© NXP B.V. 2010. All rights reserved.
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