BLA6H0912-500 NXP Semiconductors, BLA6H0912-500 Datasheet - Page 9

• Manufacturer Part Number: BLA6H0912-500
• Description: LDMOS,RF,500W,960M-1215MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLA6H0912-500

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 54A
• Operating Frequency Range: 858MHz To 860MHz
• Rf Transistor Case: SOT-634A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Test information
BLA6H0912-500_4
Product data sheet
Table 9.
See
[1]
[2]
Component
C1, C3
C2, C3, C14
C4, C13
C6, C7
C5, C8, C11, C12
C15
R1
R2
Fig 13. Component layout
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 800B or capacitor of same quality.
Figure 13
C1
C2
Printed-Circuit Board (PCB) material: Duroid 6006 with ε
See
List of components
C8
Table 9
R1
for component layout.
All information provided in this document is subject to legal disclaimers.
C3
for list of components.
Rev. 04 — 10 May 2010
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
metal film resistor
C4
C5
R2
C6
C7
LDMOS avionics radar power transistor
r
BLA6H0912-500
= 6.15 and thickness = 0.64 mm.
Value
10 μF; 35 V
39 pF
1 nF
6.8 pF
82 pF
47 μF; 63 V
56 Ω
51 Ω
C12
© NXP B.V. 2010. All rights reserved.
[1]
[1]
[2]
[2]
C13
C11
Remarks
SMD 0603
C14
001aal599
C15
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