2N7002PS NXP Semiconductors, 2N7002PS Datasheet - Page 7
2N7002PS
Manufacturer Part Number
2N7002PS
Description
MOSFET,NN CH,60V,0.32A,SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.2N7002PS115.pdf
(16 pages)
Specifications of 2N7002PS
Module Configuration
Dual
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.75V
Power Dissipation
RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N7002PS
Manufacturer:
NXP
Quantity:
22 856
Company:
Part Number:
2N7002PS,125
Manufacturer:
NXP
Quantity:
120 000
NXP Semiconductors
2N7002PS
Product data sheet
Fig 6.
Fig 8.
R
DSon
(Ω)
(A)
I
(1) V
(2) V
(3) V
(4) V
(5) V
10.0
D
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
7.5
5.0
2.5
0.0
0.0
0.0
T
current as a function of drain-source voltage;
typical values
T
Per transistor: Drain-source on-state
resistance as a function of drain current;
typical values
Per transistor: Output characteristics: drain
V
amb
amb
GS
GS
GS
GS
GS
GS
= 3.25 V
= 3.5 V
= 4 V
= 5 V
= 10 V
= 4.0 V
= 25 °C
= 25 °C
0.2
1.0
0.4
2.0
(1)
0.6
(2)
3.25 V
2.75 V
3.5 V
3.0 V
2.5 V
3.0
(3)
(5)
0.8
All information provided in this document is subject to legal disclaimers.
V
017aaa017
017aaa019
DS
I
D
(V)
(A)
(4)
4.0
1.0
Rev. 1 — 1 July 2010
Fig 7.
Fig 9.
R
DSon
(Ω)
(A)
I
10
10
10
10
(1) minimum values
(2) typical values
(3) maximum values
(1) T
(2) T
D
6.0
4.0
2.0
0.0
−3
−4
−5
−6
0.0
0
T
Per transistor: Sub-threshold drain current as
a function of gate-source voltage
I
Per transistor: Drain-source on-state
resistance as a function of gate-source
voltage; typical values
D
amb
amb
amb
= 500 mA
60 V, 320 mA N-channel Trench MOSFET
= 25 °C; V
= 150 °C
= 25 °C
2.0
1
DS
(1)
4.0
= 5 V
(2)
6.0
(1)
(2)
2
2N7002PS
V
© NXP B.V. 2010. All rights reserved.
8.0
(3)
GS
017aaa018
017aaa020
V
(V)
GS
(V)
10.0
3
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