MOSFET,N CH,600V,30A,TO-247

IXTH30N60L2

Manufacturer Part NumberIXTH30N60L2
DescriptionMOSFET,N CH,600V,30A,TO-247
ManufacturerIXYS SEMICONDUCTOR
IXTH30N60L2 datasheet
 

Specifications of IXTH30N60L2

Transistor PolarityN ChannelDrain Source Voltage Vds600V
On Resistance Rds(on)240mohmRds(on) Test Voltage Vgs10V
Voltage Vgs Max20VOperating Temperature Range-55°C To +150°C
Transistor CaseRoHS CompliantTransistor Case StyleTO-247
Rohs CompliantYes  
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Linear L2
Power
TM
MOSFET with extended
FBSOA
N-Channel Enhancement Mode
Avalanche rated
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.063in) from case for 10s
L
T
Plastic body for 10s
SOLD
M
Mounting torque (TO-247&TO-3P)
d
Weight
TO-247
TO-3P
TO-268
Symbol
Test Conditions
(T
= 25°C, unless otherwise specified)
J
BV
V
= 0V, I
= 1mA
DSS
GS
D
V
V
= V
, I
= 250μA
GS(th)
DS
GS
D
= ±20V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
= 0.5 • I
R
V
= 10V, I
DS(on)
GS
D
D25
© 2009 IXYS CORPORATION, All rights reserved
Preliminary Technical Information
IXTH30N60L2
IXTQ30N60L2
IXTT30N60L2
Maximum Ratings
600
= 1MΩ
600
GS
±20
±30
30
80
JM
30
2
540
-55 to +150
+150
-55 to +150
300
260
1.13/10
6.0
5.5
4.0
Characteristic Values
Min.
Typ.
600
2.5
T
= 125°C
J
, Note 1
V
= 600V
DSS
I
= 30A
D25
≤ ≤ ≤ ≤ ≤ 240mΩ Ω Ω Ω Ω
R
DS(on)
TO-247
V
V
TO-3P
V
V
A
A
G
D
S
A
J
TO-268
W
°C
°C
G
°C
S
°C
°C
Nm/lb.in.
G = Gate
D
S = Source
TAB = Drain
g
g
g
Features
Designed for linear operation
International standard packages
Avalanche rated
Max.
Molding epoxies meet UL 94 V-0
flammability classification
V
Guaranteed FBSOA at 75°C
4.5
V
±100
Applications
nA
μA
50
Solid state circuit breakers
μA
300
Soft start controls
240 mΩ
Linear amplifiers
Programmable loads
Current regulators
(TAB)
(TAB)
(TAB)
= Drain
DS100101(01/09)

IXTH30N60L2 Summary of contents

  • Page 1

    ... GSS DSS DS DSS 0.5 • 10V, I DS(on D25 © 2009 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 Maximum Ratings 600 = 1MΩ 600 GS ±20 ± 540 -55 to +150 +150 -55 to +150 300 260 1.13/10 6.0 5.5 4.0 Characteristic Values Min ...

  • Page 2

    ... C Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ 100V 710 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 TO-247 (IXTH) Outline Max Terminals Gate Source Dim. Millimeter nC Min. Max 4 ...

  • Page 3

    ... D © 2009 IXYS CORPORATION, All rights reserved 14V 12V 10V 20V 12V 10V 15A Value 125º 25º IXTH30N60L2 IXTQ30N60L2 Fig. 2. Extended Output Characteristics @ 25º 20V GS 14V 70 12V 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2.8 2 10V GS 2.4 2.2 2.0 1 ...

  • Page 4

    ... IXYS reserves the right to change limits, test conditions, and dimensions 125ºC J 25ºC - 40ºC 6.5 7.0 7.5 8.0 8.5 9 25ºC J 0.7 0.8 0.9 1.0 1.000 C iss 0.100 C oss 0.010 C rss 0.001 IXTH30N60L2 IXTQ30N60L2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 16 V ...

  • Page 5

    ... C Single Pulse 0.1 10 100 V - Volts DS © 2009 IXYS CORPORATION, All rights reserved = 25ºC 100.0 25µs 100µs 10.0 1ms 10ms 100ms DC 1000 IXTH30N60L2 IXTQ30N60L2 Fig. 14. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on) 1 150º 75ºC C Single Pulse 0.1 10 100 V ...