IXTH30N60L2 IXYS SEMICONDUCTOR, IXTH30N60L2 Datasheet - Page 5

• Manufacturer Part Number: IXTH30N60L2
• Description: MOSFET,N CH,600V,30A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXTH30N60L2

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 240mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes

© 2009 IXYS CORPORATION, All rights reserved
100.0
10.0
1.0
0.1
10
R
DS(on)
T
T
Single Pulse
Fig. 13. Forward-Bias Safe Operating Area
J
C
= 150ºC
= 25ºC
Limit
V
@ T
DS
- Volts
C
100
= 25ºC
DC
25µs
100µs
1ms
10ms
100ms
1000
100.0
10.0
1.0
0.1
10
R
DS(on)
Fig. 14. Forward-Bias Safe Operating Area
T
T
Single Pulse
J
C
= 150ºC
= 75ºC
Limit
IXTH30N60L2 IXTQ30N60L2
@ T
V
DS
- Volts
C
100
= 75ºC
IXTT30N60L2
IXYS REF: T_30N60L2(8R)01-20-09-A
DC
25µs
100µs
1ms
10ms
100ms
1000