IXTH30N60L2 IXYS SEMICONDUCTOR, IXTH30N60L2 Datasheet
IXTH30N60L2
Specifications of IXTH30N60L2
Related parts for IXTH30N60L2
IXTH30N60L2 Summary of contents
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... GSS DSS DS DSS 0.5 • 10V, I DS(on D25 © 2009 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 Maximum Ratings 600 = 1MΩ 600 GS ±20 ± 540 -55 to +150 +150 -55 to +150 300 260 1.13/10 6.0 5.5 4.0 Characteristic Values Min ...
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... C Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ 100V 710 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 TO-247 (IXTH) Outline Max Terminals Gate Source Dim. Millimeter nC Min. Max 4 ...
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... D © 2009 IXYS CORPORATION, All rights reserved 14V 12V 10V 20V 12V 10V 15A Value 125º 25º IXTH30N60L2 IXTQ30N60L2 Fig. 2. Extended Output Characteristics @ 25º 20V GS 14V 70 12V 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2.8 2 10V GS 2.4 2.2 2.0 1 ...
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... IXYS reserves the right to change limits, test conditions, and dimensions 125ºC J 25ºC - 40ºC 6.5 7.0 7.5 8.0 8.5 9 25ºC J 0.7 0.8 0.9 1.0 1.000 C iss 0.100 C oss 0.010 C rss 0.001 IXTH30N60L2 IXTQ30N60L2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 16 V ...
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... C Single Pulse 0.1 10 100 V - Volts DS © 2009 IXYS CORPORATION, All rights reserved = 25ºC 100.0 25µs 100µs 10.0 1ms 10ms 100ms DC 1000 IXTH30N60L2 IXTQ30N60L2 Fig. 14. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on) 1 150º 75ºC C Single Pulse 0.1 10 100 V ...