BSS138P NXP Semiconductors, BSS138P Datasheet - Page 3

MOSFET,N CH,60V,0.36A,SOT23

BSS138P

Manufacturer Part Number
BSS138P
Description
MOSFET,N CH,60V,0.36A,SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSS138P

Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.9ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Transistor Case Style
SOT-23
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS138P
Manufacturer:
INFINEON
Quantity:
279
Part Number:
BSS138P
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BSS138P
0
Company:
Part Number:
BSS138P
Quantity:
150 000
Part Number:
BSS138P,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BSS138PS
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BSS138PS
0
Part Number:
BSS138PW
Quantity:
487
Part Number:
BSS138PW
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BSS138PW
0
Part Number:
BSS138PW /
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BSS138PW,115
Manufacturer:
NORDIC
Quantity:
2 542
Part Number:
BSS138PWЈ¬115
Manufacturer:
NXP
Quantity:
15 000
NXP Semiconductors
BSS138P
Product data sheet
Fig 1.
P
(%)
der
120
80
40
0
−75
Normalized total power dissipation as a
function of ambient temperature
P
der
=
−25
----------------------- -
P
tot 25°C
P
(
tot
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
P
T
T
T
Source-drain diode
I
25
S
)
j
amb
stg
tot
×
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
100 %
75
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
Limiting values
125
All information provided in this document is subject to legal disclaimers.
T
017aaa001
amb
(°C)
Rev. 1 — 2 November 2010
175
…continued
T
T
Conditions
T
Fig 2.
amb
sp
amb
= 25 °C
(%)
I
der
= 25 °C
= 25 °C
120
80
40
0
−75
Normalized continuous drain current as a
function of ambient temperature
I
der
60 V, 360 mA N-channel Trench MOSFET
=
−25
------------------- -
I
D 25°C
(
I
D
)
25
×
100 %
[2]
[1]
[1]
Min
-
-
-
−55
−65
-
75
BSS138P
© NXP B.V. 2010. All rights reserved.
125
Max
350
420
1140
150
+150
+150
360
T
017aaa002
amb
(°C)
175
2
.
Unit
mW
mW
mW
°C
°C
°C
mA
3 of 16

Related parts for BSS138P