BSS138P NXP Semiconductors, BSS138P Datasheet - Page 3

• Manufacturer Part Number: BSS138P
• Description: MOSFET,N CH,60V,0.36A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSS138P

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.9ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-23
• Rohs Compliant: Yes

NXP Semiconductors
BSS138P
Product data sheet
Fig 1.
P
(%)
der
120
80
40
0
−75
Normalized total power dissipation as a
function of ambient temperature
P
der
=
−25
----------------------- -
P
tot 25°C
P
(
tot
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
P
T
T
T
Source-drain diode
I
25
S
)
j
amb
stg
tot
×
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
100 %
75
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
Limiting values
125
All information provided in this document is subject to legal disclaimers.
T
017aaa001
amb
(°C)
Rev. 1 — 2 November 2010
175
…continued
T
T
Conditions
T
Fig 2.
amb
sp
amb
= 25 °C
(%)
I
der
= 25 °C
= 25 °C
120
80
40
0
−75
Normalized continuous drain current as a
function of ambient temperature
I
der
60 V, 360 mA N-channel Trench MOSFET
=
−25
------------------- -
I
D 25°C
(
I
D
)
25
×
100 %
[2]
[1]
[1]
Min
-
-
-
−55
−65
-
75
BSS138P
© NXP B.V. 2010. All rights reserved.
125
Max
350
420
1140
150
+150
+150
360
T
017aaa002
amb
(°C)
175
2
.
Unit
mW
mW
mW
°C
°C
°C
mA
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