BUK6207-55C NXP Semiconductors, BUK6207-55C Datasheet - Page 4

• Manufacturer Part Number: BUK6207-55C
• Description: MOSFET,N CH,55V,90A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6207-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 6.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6207-55C
Product data sheet
Fig 1.
Fig 3.
(A)
I
(A)
D
I
10
D
120
10
10
90
60
30
10
-1
3
2
1
0
mounting base temperature
V
(1) Capped at 90 A due to package
Continuous drain current as a function of
T
Capped at 90 A by package
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
mb
GS
(1)
Limit R
= 25 °C; I
≥ 10 V
DSon
50
= V
DM
DS
is a single pulse
/ I
D
100
150
All information provided in this document is subject to legal disclaimers.
T
003aae889
mb
10
(°C)
DC
Rev. 2 — 17 September 2010
200
Fig 2.
P
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
10
2
50
BUK6207-55C
100
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
T
003aae890
mb
03na19
(°C)
10
200
3
4 of 14