BUK652R0-30C NXP Semiconductors, BUK652R0-30C Datasheet
BUK652R0-30C
Specifications of BUK652R0-30C
Related parts for BUK652R0-30C
BUK652R0-30C Summary of contents
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... BUK652R0-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... V; see GS see Figure 13 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 12; Graphic symbol ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 120 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C Min Max - 30 [1] -16 16 [2] -20 20 [3] Figure 1 - 120 [3] Figure 1 - 120 - 1082 - 306 -55 175 ...
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... P der (%) 150 200 T (°C) mb Fig DSon 1 All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C 0 50 100 150 T Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK652R0-30C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C Min Typ Max - - 0. 003aae269 t p δ = ...
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... Figure Ω Ω R G(ext) from drain lead 6 mm from package to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...
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... (V) GS Fig 8. Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C Min Typ Max - 0.8 1 138 - 003a a e 236 = 25 °C = 175 ° ...
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... Fig 10. Gate-source threshold voltage as a function of 03aa27 120 180 ( ° Fig 12. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C N-channel TrenchMOS intermediate level FET 4 3 max @1mA 2 typ @1mA min @2.5mA 1 0 -60 ...
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... Fig 14. Input, output and reverse transfer capacitance 100 175 ° ° 0.5 1 All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C N-channel TrenchMOS intermediate level FET function of drain-source voltage; typical values 003a a e 243 1.5 V (V) SD ...
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... Fig 16. Drain-source on-state resistance as a function of drain current; typical values BUK652R0-30C Product data sheet 10 R DSon (mΩ) V ( All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C N-channel TrenchMOS intermediate level FET 003aae238 3 100 I (A) D © NXP B.V. 2010. All rights reserved ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C N-channel TrenchMOS intermediate level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK652R0-30C v.1 20100906 BUK652R0-30C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 September 2010 BUK652R0-30C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 6 September 2010 Document identifier: BUK652R0-30C ...