BUK652R0-30C NXP Semiconductors, BUK652R0-30C Datasheet - Page 8

• Manufacturer Part Number: BUK652R0-30C
• Description: MOSFET,N CH,30V,120A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK652R0-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
BUK652R0-30C
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
I
D
10
10
10
10
10
10
a
1.5
0.5
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
Sub-threshold drain current as a function of
0
0
1
min
60
2
typ
max
120
3
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V
T
GS
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Rev. 01 — 6 September 2010
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4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Gate charge waveform definitions
V
GS(th)
(V)
N-channel TrenchMOS intermediate level FET
4
3
2
1
0
-60
junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
GS
BUK652R0-30C
max @1mA
min @2.5mA
Q
typ @1mA
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aaa508
003aae542
T
j
(°C)
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