PMN38EN NXP Semiconductors, PMN38EN Datasheet - Page 4

• Manufacturer Part Number: PMN38EN
• Description: MOSFET,N CH,30V,5.4A,SOT457
• Manufacturer: NXP Semiconductors

Specifications of PMN38EN

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 49.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-457
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
6. Characteristics
Table 6.
PMN38EN_2
Product data sheet
Symbol
R
Symbol
Static characteristics
V
V
I
DSS
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
(BR)DSS
GS(th)
th(j-sp)
Mounted on a metal clad board
Z
(K/W)
th(j-sp)
10
10
2
1
10
-4
δ = 0.5
0.2
0.1
0.05
0.02
Thermal characteristics
Characteristics
Parameter
thermal resistance
from junction to solder
point
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
single pulse
10
-3
Conditions
see
Conditions
I
T
I
T
I
T
I
I
see
V
V
T
D
D
D
D
D
j
j
j
j
DS
DS
= 250 μA; V
= -55 °C
= 250 μA; V
= 25 °C
= 1 mA; V
= 150 °C
=1 mA; V
= 1 mA; V
= 150 °C
Figure 4
Figure 7
= 30 V; V
= 30 V; V
10
-2
DS
Rev. 02 — 3 October 2007
DS
DS
GS
GS
GS
GS
= V
= V
= V
= 0 V; T
= 0 V;
= 0 V;
= 0 V;
GS
GS
GS
; T
; T
;
10
j
j
-1
= -55 °C
= 25 °C;
j
= 25 °C
[1]
Min
-
1
Min
27
30
0.6
-
1
-
-
N-channel TrenchMOS logic level FET
Typ
-
-
-
-
1.5
0.01
-
Typ
-
P
10
t
p
PMN38EN
t
T
p
Max
-
-
-
2.2
2
0.1
10
Max
70
(s)
© NXP B.V. 2007. All rights reserved.
δ =
03aj69
T
t
p
t
10
2
Unit
V
V
V
V
V
μA
μA
Unit
K/W
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