PMN38EN NXP Semiconductors, PMN38EN Datasheet - Page 7

• Manufacturer Part Number: PMN38EN
• Description: MOSFET,N CH,30V,5.4A,SOT457
• Manufacturer: NXP Semiconductors

Specifications of PMN38EN

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 49.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-457
• Rohs Compliant: Yes

NXP Semiconductors
PMN38EN_2
Product data sheet
Fig 9. Normalized drain-source on-state resistance
Fig 11. Gate charge waveform definitions
a
1.5
0.5
2
1
0
a =
factor as a function of junction temperature
-60
V
V
V
V
GS(pl)
DS
GS(th)
GS
R
DSon ( 25°C )
R
DSon
Q
0
GS1
I
Q
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
003aaa508
T
j
03af18
(°C)
180
Rev. 02 — 3 October 2007
Fig 10. Gate-source voltage as a function of gate
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
V
(V)
GS
10
10
10
10
3
2
8
6
4
2
0
V
10
I
charge; typical values
as a function of drain-source voltage; typical
values
D
GS
0
-1
= 5 A; T
= 0 V; f = 1 M H z
N-channel TrenchMOS logic level FET
j
= 25 °C; V
1
5
DS
= 15 V
10
10
PMN38EN
V
© NXP B.V. 2007. All rights reserved.
Q
DS
G
(nC)
C
C
C
(V)
03aj76
03aj75
iss
oss
rss
10
15
2
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