PSMN016-100YS NXP Semiconductors, PSMN016-100YS Datasheet - Page 11

• Manufacturer Part Number: PSMN016-100YS
• Description: MOSFET,N CH,100V,51A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 12.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
7. Package outline
Fig 18. Package outline SOT669 (LFPAK)
PSMN016-100YS_3
Product data sheet
Plastic single-ended surface-mounted package (LFPAK); 4 leads
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
DIMENSIONS (mm are the original dimensions)
UNIT
mm
H
VERSION
OUTLINE
SOT669
L 1
L 2
D
1.20
1.01
A
0.15
0.00
A 1
1.10
0.95
A 2
1
e
0.25
A 3
IEC
2
b 2
E
0.50
0.35
b
1/2
4.41
3.62
e
3
b 2
b
2.2
2.0
b 3
MO-235
All information provided in this document is subject to legal disclaimers.
JEDEC
4
0.9
0.7
b 4
0
A
REFERENCES
w
Rev. 03 — 30 March 2010
0.25
0.19
M
c
mounting
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
A
base
0.30
0.24
c 2
c 2
JEITA
scale
4.10
3.80
D
2.5
(1)
A 2
A
D 1
max
4.20
c
(1)
A 1
E
5.0
4.8
C
(1)
C
X
E 1
5 mm
3.3
3.1
(1)
1.27
e
D 1
detail X
PSMN016-100YS
6.2
5.8
H
PROJECTION
EUROPEAN
0.85
0.40
L
1.3
0.8
L 1
b 3
L
E 1
1.3
0.8
L 2
© NXP B.V. 2010. All rights reserved.
0.25
ISSUE DATE
w
(A )
b 4
04-10-13
06-03-16
3
y C
0.1
y
θ
SOT669
8°
0°
θ
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