PSMN3R4-30PL NXP Semiconductors, PSMN3R4-30PL Datasheet - Page 9

• Manufacturer Part Number: PSMN3R4-30PL
• Description: MOSFET,N CH,30V,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R4-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PSMN3R4-30PL
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Drain-source on-state resistance as a function
V
R
(mΩ)
GS (th)
(V)
DSon
12
3
2
1
0
9
6
3
0
-60
junction temperature
of drain current; typical values
0
V
GS
(V) = 2.8
20
0
40
max
min
typ
60
60
3
120
80
All information provided in this document is subject to legal disclaimers.
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Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
1.5
0.5
2
1
0
−60
factor as a function of junction temperature
V
N-channel 30 V 3.4 mΩ logic level MOSFET
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
PSMN3R4-30PL
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
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