PBRP113ZT NXP Semiconductors, PBRP113ZT Datasheet - Page 6

• Manufacturer Part Number: PBRP113ZT
• Description: TRANSISTOR,PNP,W/RES,40V,0.8A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ZT

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -40V
• Power Dissipation Pd: 250mW
• Dc Collector Current: -600mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Dc Current Gain Hfe: 320
• Rohs Compliant: Yes

NXP Semiconductors
7. Characteristics
PBRP113ZT_1
Product data sheet
Table 7.
T
[1]
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
c
Pulse test: t
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
p
300 s;
Rev. 01 — 16 January 2008
0.02.
PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 10 k
Conditions
V
I
V
I
V
I
V
I
V
I
V
I
I
I
I
I
I
I
I
I
V
I
V
I
V
I
f = 1 MHz
E
B
C
C
C
C
C
B
C
B
C
B
C
B
C
C
E
CB
CE
EB
CE
CE
CE
CE
CE
CB
= 0 A
= 0 A
= 2.5 mA
= 10 mA
= 10 mA
= 6 mA
= i
= 0 A
= 50 mA
= 300 mA
= 600 mA
= 50 mA;
= 200 mA;
= 500 mA;
= 600 mA;
= 100 A
= 20 mA
= 30 V;
= 30 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 0.3 V;
= 10 V;
e
= 0 A;
[1]
[1]
[1]
[1]
Min
-
-
-
190
230
190
-
-
-
-
0.7
9
-
0.3
0.4
PBRP113ZT
Typ
-
-
-
270
320
270
1
10
11
35
70
200
450
0.5
0.7
© NXP B.V. 2008. All rights reserved.
Max
-
-
-
1.3
11
-
100
0.5
0.8
45
100
300
750
1
1.4
Unit
nA
mA
mV
mV
mV
mV
V
V
k
pF
A
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