ACT108W-600E NXP Semiconductors, ACT108W-600E Datasheet - Page 3

• Manufacturer Part Number: ACT108W-600E
• Description: TRIAC,AC SWITCH,600V SOT223
• Manufacturer: NXP Semiconductors

Specifications of ACT108W-600E

• Peak Repetitive Off-state Voltage, Vdrm: 600V
• On State Rms Current It(rms): 800mA
• Peak Non Rep Surge Current Itsm 50hz: 8.8A
• Holding Current Max Ih: 25mA
• Gate Trigger Voltage Max Vgt: 1V
• Operating: RoHS Compliant

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
ACT108W-600E
Product data sheet
Symbol
V
I
I
I
dI
I
V
P
T
T
V
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
PP
T
/dt
I
T(RMS)
(A)
8
6
4
2
0
duration; maximum values
10
f = 50 Hz
T
RMS on-state current as a function of surge
sp
Limiting values
2
= 112 °C
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate voltage
average gate power
storage temperature
junction temperature
peak pulse voltage
2
t for fusing
10
1
surge duration (s)
1
All information provided in this document is subject to legal disclaimers.
003aac822
10
Conditions
full sine wave; T
see
full sine wave; T
t
full sine wave; T
t
t
I
t = 20 μs
positive applied gate voltage
over any 20 ms period
T
see
p
p
p
T
j
Rev. 5 — 13 July 2010
= 16.7 ms
= 20 ms; see
= 10 ms; sine-wave pulse
= 1 A; I
= 25 °C; non-repetitive, off-state;
Figure
Figure 3
G
4; see
= 20 mA; dI
Fig 2.
Figure
I
sp
j(init)
j(init)
T(RMS)
(A)
Figure
≤ 112 °C;
0.8
0.6
0.4
0.2
= 25 °C;
= 25 °C;
1
0
point temperature; maximum values
RMS on-state current as a function of solder
5; see
50
G
/dt = 0.2 A/µs
1; see
Figure 6
Figure 2
0
ACT108W-600E
50
AC Thyristor power switch
Min
-
-
-
-
-
-
-
-
-
-40
-
-
100
© NXP B.V. 2010. All rights reserved.
T
003aac807
sp
15
150
Max
600
0.8
8.8
8
0.32
100
1
0.1
125
2
( C)
150
Unit
V
A
A
A
A
A/µs
A
V
W
°C
°C
kV
3 of 14
2
s