ACT108W-600E NXP Semiconductors, ACT108W-600E Datasheet - Page 7

• Manufacturer Part Number: ACT108W-600E
• Description: TRIAC,AC SWITCH,600V SOT223
• Manufacturer: NXP Semiconductors

Specifications of ACT108W-600E

• Peak Repetitive Off-state Voltage, Vdrm: 600V
• On State Rms Current It(rms): 800mA
• Peak Non Rep Surge Current Itsm 50hz: 8.8A
• Holding Current Max Ih: 25mA
• Gate Trigger Voltage Max Vgt: 1V
• Operating: RoHS Compliant

NXP Semiconductors
6. Characteristics
Table 6.
ACT108W-600E
Product data sheet
Symbol
I
I
I
V
V
I
dV
dI
V
GT
L
H
D
Fig 9.
T
GT
CL
com
D
Z
/dt
(K/W)
th(j-sp)
/dt
10
10
10
10
1
2
1
2
10
Transient thermal impedance from junction to solder point as a function of pulse width
5
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
clamping voltage
10
4
Conditions
V
T
V
T
V
see
V
I
V
V
V
V
V
circuit; see
V
dV
see
I
see
All information provided in this document is subject to legal disclaimers.
T
CL
10
j
j
D
D
D
D
D
D
D
D
DM
D
= 1.1 A; see
= 25 °C; see
= 25 °C
com
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 12 V; I
= 600 V; T
= 600 V; T
= 400 V; T
= 100 µA; t
3
Figure 11
Figure
Figure 17
= 402 V; T
/dt = 15 V/µs; gate open circuit;
Rev. 5 — 13 July 2010
15; see
Figure 14
T
T
G
T
T
j
= 100 mA; LD+ G-;
= 100 mA; LD- G-;
= 100 mA; T
= 100 mA; T
= 25 °C; see
= 12 mA; T
j
j
j
p
≤ 125 °C
≤ 25 °C
= 125 °C; I
Figure 13
j
Figure 10
= 1 ms; T
= 125 °C; gate open
10
Figure 16
2
j
T(RMS)
j
= 25 °C;
j
j
≤ 125 °C;
Figure 12
≤ 125 °C
= 25 °C
= 1 A;
10
1
ACT108W-600E
Min
1
1
-
-
-
0.15
-
-
-
1000
0.3
650
AC Thyristor power switch
1
P
Typ
-
-
-
9
-
-
-
-
-
-
-
-
t
p
t
© NXP B.V. 2010. All rights reserved.
p
(s)
003aac808
Max
10
10
30
25
1.3
-
1
0.2
2
-
-
-
t
10
Unit
mA
mA
mA
mA
V
V
V
mA
µA
V/µs
A/ms
V
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