BUK652R1-30C NXP Semiconductors, BUK652R1-30C Datasheet - Page 10

• Manufacturer Part Number: BUK652R1-30C
• Description: MOSFET,N CH,30V,120A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK652R1-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2020µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-78A
• Rohs Compliant: Yes

NXP Semiconductors
BUK652R1-30C
Product data sheet
Fig 15. Normalized drain-source on-state resistance
Fig 17. Gate charge waveform definitions
a
1.5
0.5
2
1
0
−60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
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003aaa508
T
j
( ° C)
03aa27
Rev. 02 — 16 December 2010
180
Fig 16. Gate-source voltage as a function of gate
Fig 18. Gate-source voltage as a function of gate
V
(V)
V
GS
(V)
N-channel TrenchMOS intermediate level FET
10
10
GS
8
6
4
2
0
8
6
4
2
0
charge; typical values
charge; typical values
0
0
V
DS
10
50
= 6V
14V
15V
BUK652R1-30C
100
20
24V
150
30
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24V
Q
003aae298
Q
003aaf019
G
G
(nC)
(nC)
200
40
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