BUK652R1-30C NXP Semiconductors, BUK652R1-30C Datasheet - Page 9

• Manufacturer Part Number: BUK652R1-30C
• Description: MOSFET,N CH,30V,120A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK652R1-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2020µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-78A
• Rohs Compliant: Yes

NXP Semiconductors
BUK652R1-30C
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Drain-source on-state resistance as a function
(mΩ)
R
V
DSon
GS (th)
(V)
7.5
2.5
10
3
2
1
0
5
0
-60
junction temperature
of drain current; typical values
0
25
0
V
GS
(V) = 3.8
max
min
typ
60
50
4.0
120
75
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003aae297
003a a c337
T
I
D
j
(A)
(°C)
10.0
4.5
5.0
6.0
Rev. 02 — 16 December 2010
180
100
Fig 12. Sub-threshold drain current as a function of
Fig 14. Drain-source on-state resistance as a function
R
(m Ω )
10
10
10
10
10
10
(A)
I
DSon
D
N-channel TrenchMOS intermediate level FET
-1
-2
-3
-4
-5
-6
40
30
20
10
0
gate-source voltage
of drain current; typical values
0
0
3.0
min
20
1
BUK652R1-30C
3.2
3.4
40
typ
2
V
GS
(V) = 3.5
© NXP B.V. 2010. All rights reserved.
V
10.0
3.8
4.0
4.5
GS
3.6
I
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D
003aaf017
max
(A)
(V)
60
3
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