SI4430BDY-T1-E3 Vishay, SI4430BDY-T1-E3 Datasheet

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SI4430BDY-T1-E3

Manufacturer Part Number
SI4430BDY-T1-E3
Description
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,14A I(D),SO
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4430BDY-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.5 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 4.5V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0045 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4430BDY-T1-E3TR

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI4430BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4430BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
100 000
Part Number:
SI4430BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
220
Part Number:
SI4430BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4430BDY-T1-E3
Quantity:
2 454
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Part Number:
SI4430BDY-T1-E3
Quantity:
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Company:
Part Number:
SI4430BDY-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73184
S09-0228-Rev. D, 09-Feb-09
Ordering Information: Si4430BDY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
0.0045 at V
0.006 at V
G
S
S
S
R
1
2
3
4
DS(on)
Si4430BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
GS
GS
Top View
(Ω)
SO-8
= 4.5 V
= 10 V
J
a
= 150 °C)
8
7
6
5
a
I
a
N-Channel 30-V MOSFET
D
D
D
D
D
20
17
(A)
a
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
L = 0.1 mH
(Typ.)
24
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
Symbol
Symbol
T
Available
R
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJF
GS
DS
AS
D
S
D
stg
g
Tested
®
Power MOSFETs
Typical
10 s
2.7
3.0
2.0
G
20
16
34
67
15
N-Channel MOSFET
- 55 to 150
± 20
± 60
30
40
80
D
S
Steady State
Maximum
1.40
1.6
1.0
14
11
41
80
19
Vishay Siliconix
Si4430BDY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4430BDY-T1-E3 Summary of contents

Page 1

... GS SO Top View Ordering Information: Si4430BDY-T1-E3 (Lead (Pb)-free) Si4430BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si4430BDY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Gate Charge 150 ° 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73184 S09-0228-Rev. D, 09-Feb- °C J 0.8 1.0 1.2 Si4430BDY Vishay Siliconix 4000 3500 C iss 3000 2500 2000 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4430BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited (on °C C 0.1 Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73184. Document Number: 73184 S09-0228-Rev. D, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4430BDY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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