BP 104 F OSRAM Opto Semiconductors Inc, BP 104 F Datasheet - Page 3

• Manufacturer Part Number: BP 104 F
• Description: Photodiodes PHOTODIODE SMT
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BP 104 F

• Photodiode Material: Silicon
• Peak Wavelength: 950 nm
• Maximum Reverse Voltage: 20 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 34 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 20 ns
• Maximum Fall Time: 20 ns
• Package / Case: DIL-2
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 20V
• Forward Voltage: 1.3V
• Responsivity: 0.7A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 34uA
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: DIL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0084

Kennwerte (T
Characteristics (cont’d)
Bezeichnung
Parameter
Kurzschlussstrom,
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
Durchlassspannung,
Forward voltage
Kapazität,
Capacitance
Temperaturkoeffizient von
Temperature coefficient of
Temperaturkoeffizient von
Temperature coefficient of
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
Nachweisgrenze,
Detection limit
2009-04-07
L
R
= 50 Ω;
= 10 V
V
V
R
R
= 0 V,
A
= 5 V; λ = 850 nm;
= 25
V
E
R
f
e
°
= 10 V
I
= 1 MHz,
C, λ = 950 nm)
= 0.5 mW/cm
F
= 100 mA,
V
I
V
I
SC
SC
O
O
E
I
= 0
p
E
2
= 800 μA
= 0
3
Symbol
Symbol
I
t
V
C
TC
TC
NEP
D*
r
SC
,
F
0
t
V
I
f
Wert
Value
17
20
1.3
48
– 2.6
0.18
3.6 × 10
6.1 × 10
BP 104 F, BP 104 FS
–14
12
Einheit
Unit
μA
ns
V
pF
mV/K
%/K
----------- -
cm
------------------------- -
W
Hz
×
W
Hz