BP 104 F OSRAM Opto Semiconductors Inc, BP 104 F Datasheet - Page 4

• Manufacturer Part Number: BP 104 F
• Description: Photodiodes PHOTODIODE SMT
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BP 104 F

• Photodiode Material: Silicon
• Peak Wavelength: 950 nm
• Maximum Reverse Voltage: 20 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 34 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 20 ns
• Maximum Fall Time: 20 ns
• Package / Case: DIL-2
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 20V
• Forward Voltage: 1.3V
• Responsivity: 0.7A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 34uA
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: DIL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0084

Relative Spectral Sensitivity
S
Dark Current
I
Directional Characteristics
S
2009-04-07
R
rel
rel
S
=
Ι
R
=
rel
=
100
f
4000
3000
2000
1000
100
50
60
70
80
90
f
f
80
60
40
20
pA
%
(
0
0
700
V
(λ)
(ϕ)
0
R
),
1.0
E
800
40
= 0
5
900
0.8
10
1000
30
0.6
15
nm
V
OHF00368
OHFD1781
R
λ
20
V
0.4
1200
20
10
ϕ
1.0
0.8
0.6
0.4
0.2
0
0
0
Photocurrent
Open-Circuit Voltage
Capacitance
C
Ι
C
P
=
10
10
μ
10
10
10
A
-1
f
60
pF
50
40
30
20
10
20
10
0
3
2
1
0
10
(
V
0
-2
R
), f = 1 MHz, E = 0
40
10
10
1
-1
I
60
P
10
10
=
4
V
Ι
2
0
O
P
f
80
(E
μ
e
10
W/cm
V
),
1
O
100
OHF01056
OHF01778
E
V
V
2
e
V
=
R
R
OHF01402
f
10
10
= 5 V
(
10
10
10
10
10
mV
4
2
120
E
4
3
2
1
0
e
)
V
O
Total Power Dissipation
P
Dark Current
I
R
tot
=
P
Ι
tot
=
R
f
mW
160
140
120
100
10
10
10
10
10
BP 104 F, BP 104 FS
80
60
40
20
f
nA
(
0
T
-1
3
2
1
0
(
0
0
T
A
),
A
)
V
20
20
R
= 10 V, E = 0
40
40
60
60
80 ˚C 100
80 ˚C 100
OHF00958
T
OHF00082
T
A
A