PEMD10 T/R NXP Semiconductors, PEMD10 T/R Datasheet - Page 3

• Manufacturer Part Number: PEMD10 T/R
• Description: Digital Transistors TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors

Specifications of PEMD10 T/R

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 0.047
• Mounting Style: SMD/SMT
• Package / Case: SOT-666-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PEMD10,115

NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2004 Apr 15
PEMD10
PUMD10
Per transistor; for the PNP transistor with negative polarity
V
V
V
V
V
I
I
P
T
T
T
Per device
P
TYPE NUMBER
O
CM
stg
j
amb
CBO
CEO
EBO
I
I
tot
tot
NPN/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
SYMBOL
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
input voltage TR2
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
positive
negative
positive
negative
SOT363
SOT666
SOT363
SOT666
NAME
−
−
PARAMETER
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
open emitter
open base
open collector
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
3
amb
amb
DESCRIPTION
PACKAGE
≤ 25 °C;
≤ 25 °C;
CONDITIONS
PEMD10; PUMD10
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
−
−
−
MIN.
Product data sheet
50
50
10
+12
−5
+5
−12
100
100
−
200
200
+150
150
+150
−
300
300
MAX.
VERSION
SOT666
SOT363
V
V
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
mW
mW
UNIT