PEMD10 T/R NXP Semiconductors, PEMD10 T/R Datasheet - Page 5

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PEMD10 T/R

Manufacturer Part Number
PEMD10 T/R
Description
Digital Transistors TRNS DOUBL RET TAPE7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PEMD10 T/R

Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
2.2 KOhms
Typical Resistor Ratio
0.047
Mounting Style
SMD/SMT
Package / Case
SOT-666-6
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PEMD10,115
NXP Semiconductors
CHARACTERISTICS
T
2004 Apr 15
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
NPN/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
c
= 25 °C; unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
PARAMETER
V
V
V
V
V
I
V
V
V
f = 1 MHz
C
CB
CE
CE
EB
CE
CE
CE
CB
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
5
CONDITIONS
C
C
B
C
E
B
B
E
= 0 A
= 0.25 mA
= 10 mA
= 100 μA
C
= 0 A
= 0 A
= 0 A; T
= i
= 5 mA
e
= 0 A;
j
= 150 °C
100
1.1
1.54
17
MIN.
PEMD10; PUMD10
0.6
0.75
2.2
21
TYP.
Product data sheet
100
1
50
180
100
0.5
2.86
26
2.5
3
MAX.
nA
μA
μA
μA
mV
V
V
pF
pF
UNIT

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