BSM150GB120DN2

Manufacturer Part NumberBSM150GB120DN2
DescriptionIGBT Modules 1200V 150A DUAL
ManufacturerInfineon Technologies
BSM150GB120DN2 datasheet
 

Specifications of BSM150GB120DN2

ConfigurationDualCollector- Emitter Voltage Vceo Max1200 V
Collector-emitter Saturation Voltage2.5 VContinuous Collector Current At 25 C210 A
Gate-emitter Leakage Current320 nAPower Dissipation1.25 KW
Maximum Operating Temperature+ 150 CMaximum Gate Emitter Voltage20 V
Mounting StyleScrewPackage / CaseHalf Bridge2
Ic (max)150.0 AVce(sat) (typ)2.5 V
TechnologyIGBT2 StandardHousing62 mm
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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BSM 150 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 150 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
= 20 k
GE
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current, t
T
= 25 °C
C
T
= 80 °C
C
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
V
I
Package
CE
C
1200V 210A
HALF-BRIDGE 2
Symbol
V
CE
V
CGR
V
GE
I
C
= 1 ms
I
p
Cpuls
P
tot
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
1
Ordering Code
C67076-A2108-A70
Values
Unit
1200
V
1200
± 20
A
210
150
420
300
W
1250
+ 150
°C
-40 ... + 125
0.1
K/W
0.25
2500
Vac
20
mm
11
F
sec
40 / 125 / 56
Oct-21-1997

BSM150GB120DN2 Summary of contents

  • Page 1

    BSM 150 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 150 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...

  • Page 2

    BSM 150 GB 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 150 ...

  • Page 3

    BSM 150 GB 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 5.6 Gon Rise time V = 600 V, ...

  • Page 4

    BSM 150 GB 120 DN2 Power dissipation tot C parameter: T 150 °C j 1300 W 1100 P 1000 tot 900 800 700 600 500 400 300 200 100 Collector ...

  • Page 5

    BSM 150 GB 120 DN2 Typ. output characteristics parameter µ ° 300 A 260 17V 15V I 240 13V C 11V 220 9V 7V 200 ...

  • Page 6

    BSM 150 GB 120 DN2 Typ. gate charge Gate parameter 150 A C puls 600 200 400 Reverse ...

  • Page 7

    BSM 150 GB 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± ...

  • Page 8

    BSM 150 GB 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 300 A 260 I 240 F 220 200 180 T =125°C 160 j 140 120 100 ...

  • Page 9

    BSM 150 GB 120 DN2 Package Outlines Dimensions in mm Weight: 420 g Circuit Diagram 9 Oct-21-1997 ...

  • Page 10

    ... Technische Information / Technical Information IGBT-Module BSM150GB120DN2 IGBT-Modules Anhang C-Serie Appendix C-series Gehäuse spezifische Werte Housing specific values Modulinduktivität stray inductance module Gehäusemaße C-Serie Package outline C-series typ sCE Appendix C-series nH Appendix_C-Serie_BSM150GB120DN2.xls 2001-09-20 ...

  • Page 11

    Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produkte s für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen ...