ADF4216BRUZ-RL7 Analog Devices Inc, ADF4216BRUZ-RL7 Datasheet - Page 4

• Manufacturer Part Number: ADF4216BRUZ-RL7
• Description: DUAL PLL,1.2/0.5GHz I.C
• Manufacturer: Analog Devices Inc
• Type: Clock/Frequency Synthesizer (RF/IF)r

Specifications of ADF4216BRUZ-RL7

• Pll: Yes
• Input: CMOS
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 3:1
• Differential - Input:output: Yes/No
• Frequency - Max: 1.2GHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP
• Frequency-max: 1.2GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ADF4216/ADF4217/ADF4218
TIMING CHARACTERISTICS
Parameter
t
t
t
t
t
t
NOTES
Guaranteed by design but not production tested.
Specification subject to change without notice.
ABSOLUTE MAXIMUM RATINGS
(T
V
V
V
V
Digital I/O Voltage to GND . . . . . . –0.3 V to DV
Analog I/O Voltage to GND . . . . . . . . . –0.3 V to V
REF
Operating Temperature Range
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . 150°C
TSSOP θ
Model
ADF4216BRU
ADF4217BRU
ADF4218BRU
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADF4216/ADF4217/ADF4218 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
1
2
3
4
5
6
Contact the factory for chip availability.
DD
DD
P
P
A
IF
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
1, V
1, V
= 25°C unless otherwise noted)
1 to GND
1 to V
IN
IN
A, IF
, RF
P
P
2 to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
2 to V
JA
DD
IN
IN
Thermal Impedance . . . . . . . . . . . . . 150.4°C/W
A, RF
2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
B to GND . . . . . . . . . . . –0.3 V to V
DD
3
1 . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V
. . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Limit at
T
(B Version)
10
10
25
25
10
20
CLOCK
IN
DATA
MIN
B,
LE
LE
Temperature Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
to T
DB21 (MSB)
MAX
1, 2
Unit
ns min
ns min
ns min
ns min
ns min
ns min
(V
T
A
t
DD
1
= T
1 = V
DB20
MIN
to T
DD
t
2 = 3 V
2
DD
DD
MAX
P
ORDERING GUIDE
+ 0.3 V
+ 0.3 V
+ 0.3 V
unless otherwise noted.)
Package Description
Thin Shrink Small Outline Package (TSSOP)
Thin Shrink Small Outline Package (TSSOP)
Thin Shrink Small Outline Package (TSSOP)
Test Conditions/Comments
DATA to CLOCK Setup Time
DATA to CLOCK Hold Time
CLOCK High Duration
CLOCK Low Duration
CLOCK to LE Setup Time
LE Pulsewidth
10%, 5 V
DB2
t
3
Lead Temperature, Soldering
NOTES
1
2
3
TRANSISTOR COUNT
11749 (CMOS) and 522 (Bipolar).
Stresses above those listed under Absolute Maximum Ratings may cause perma-
This device is a high-performance RF integrated circuit with an ESD rating of
GND = AGND = DGND = 0 V.
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
< 2 kV and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
10%; V
t
4
(CONTROL BIT C2)
P
DB1
1, V
P
2 = V
DD
, 5 V
t
(CONTROL BIT C1)
5
10%; AGND = DGND = 0 V;
DB0 (LSB)
WARNING!
t
6
Package Option
RU-20
RU-20
RU-20
ESD SENSITIVE DEVICE