CY7C1061AV33-12ZXCT Cypress Semiconductor Corp, CY7C1061AV33-12ZXCT Datasheet - Page 10

• Manufacturer Part Number: CY7C1061AV33-12ZXCT
• Description: CY7C1061AV33-12ZXCT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1061AV33-12ZXCT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 16M (1M x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05256 Rev. *G
Document History Page
Document Title: CY7C1061AV33 16-Mbit (1M x 16) Static RAM
Document Number: 38-05256
REV.
*G
*A
*B
*C
*D
*E
*F
**
ECN NO.
113725
117058
117989
120383
124439
492137
508117
877322
See ECN
See ECN
See ECN
03/28/02
07/31/02
08/30/02
11/06/02
2/25/03
Issue
Date
Change
Orig. of
MEG
NXR
NXR
VKN
NSL
DFP
DFP
DFP
New Data Sheet
Removed 15-ns bin
Added 8-ns bin
Changed Icc for 8, 10, 12 bins
t
Load Cap Comment changed (for Tx line load)
t
Changed some 8-ns bin numbers (t
Removed hz<lz comments from data sheet
Final data sheet
Added note 3 to “AC Test Loads and Waveforms” and note 7 to t
Updated Input/Output Caps (for 48BGA only) to 8 pF/10 pF and for the
54-pin TSOP to 6/8 pF
Changed ISB1 from 100 mA to 70 mA
Shaded fBGA production ordering information
Corrected Block Diagram on page #1
Removed 8 ns speed bin
Changed 48-Ball FBGA to 60-Ball FBGA in Pin Configuration
Included Note #1 and 2 on page #2
Changed the description of I
Current in DC Electrical Characteristics table
Updated the Ordering Information Table
Updated FBGA Pin Configuration
Updated Ordering Information table
Updated Ordering Information table
power
SD
changed to 5.5 ns for the 10-ns bin
changed from 1 µs to 1 ms.
Description of Change
IX
from Input Load Current to Input Leakage
HZ
, t
DOE
, t
DBE
CY7C1061AV33
)
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pu
and t
pd
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