CY7C1061AV33-12ZXCT Cypress Semiconductor Corp, CY7C1061AV33-12ZXCT Datasheet - Page 5

• Manufacturer Part Number: CY7C1061AV33-12ZXCT
• Description: CY7C1061AV33-12ZXCT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1061AV33-12ZXCT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 16M (1M x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05256 Rev. *G
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)
Read Cycle No. 2 (OE Controlled)
Notes
12. Device is continuously selected. OE, CE, BHE or BHE, or both = V
13. WE is HIGH for Read cycle.
14. Address valid prior to or coincident with CE
ADDRESS
DATA OUT
CURRENT
BHE/BLE
DATA OUT
SUPPLY
ADDRESS
V
CE
CC
CE
CE
V
OE
CC
1
2
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
t
LZCE
t
LZBE
[13, 14]
1
t
t
ACE
LZOE
transition LOW and CE
t
CDR
3.0V
t
OHA
50%
t
t
DOE
DBE
t
[12, 13]
AA
IL
2
DATA RETENTION MODE
. CE2 = V
t
transition HIGH.
RC
V
IH
DR
.
t
RC
RC
> 2V
DATA VALID
3.0V
t
DATA VALID
HZOE
t
R
t
HZBE
CY7C1061AV33
t
HZCE
t
PD
50%
IMPEDANCE
Page 5 of 10
HIGH
I
I
CC
SB
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