CY7C1061AV33-12ZXCT Cypress Semiconductor Corp, CY7C1061AV33-12ZXCT Datasheet - Page 3

• Manufacturer Part Number: CY7C1061AV33-12ZXCT
• Description: CY7C1061AV33-12ZXCT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1061AV33-12ZXCT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 16M (1M x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05256 Rev. *G
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State
DC Electrical Characteristics
Capacitance
AC Test Loads and Waveforms
Notes
V
V
V
V
I
I
I
I
I
C
C
3. V
4. Tested initially and after any design or process changes that may affect these parameters.
5. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V
Parameter
IX
OZ
CC
SB1
SB2
Parameter
OH
OL
IH
IL
IN
OUT
minimum operating V
IL
OUTPUT
(min) = –2.0V for pulse durations of less than 20 ns.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current GND < V
Output Leakage Current GND < V
V
Supply Current
Automatic CE
Power-down Current
—TTL Inputs
Automatic CE
Power-down Current
—CMOS Inputs
Input Capacitance
IO Capacitance
CC
[3]
[4]
...................................–0.5V to V
Operating
Description
Description
Z
DD
CC
0
, normal SRAM operation can begin including reduction in V
= 50Ω
to Relative GND
Rise time > 1V/ns
(a)
GND
3.3V
[3]
30 pF* * Capacitive Load consists of all com-
T
50Ω
A
I
I
V
f = f
CE
V
V
CE
max V
CE > V
V
or V
(Over the Operating Range)
OH
OL
CC
IN
IN
IN
= 25°C, f = 1 MHz, V
[3]
[5]
2
2
= 8.0 mA
max
= –4.0 mA
> V
< V
> V
IN
... –0.5V to +4.6V
= max,
<= V
<= 0.3V
ponents of the test environment.
CC
< 0.3V, f = 0
CC
IH
IL
CC
= 1/t
V
, f = f
,
I
O
Test Conditions
10%
IL,
or
Test Conditions
TH
< V
– 0.3V,
– 0.3V,
< V
90%
ALL INPUT PULSES
max V
= 1.5V
CC
RC
CC
max
CC
+ 0.5V
, Output Disabled
CC
(c)
Commercial
Industrial
Commercial/
Industrial
, CE > V
CC
= 3.3V
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
Operating Range
Commercial
Industrial
IH
DD
Range
to the data retention (V
90%
10%
Fall time:
> 1V/ns
–0.3
Min
2.4
2.0
–1
–1
TSOP II
DD
[3]
–10
6
8
(3.0V). As soon as 1 ms (T
............................... –0.5V to V
OUTPUT
V
CC
–40°C to +85°C
CCDR
Max
Temperature
0°C to +70°C
275
275
INCLUDING
JIG AND
SCOPE
0.4
0.8
+1
+1
70
50
3.3V
+ 0.3
Ambient
, 2.0V) voltage.
5 pF*
FBGA
CY7C1061AV33
–0.3
10
Min
2.4
2.0
8
–1
–1
(b)
R1 317 Ω
power
–12
V
) after reaching the
CC
3.3V ± 0.3V
Max
260
260
0.4
0.8
+1
+1
70
50
Page 3 of 10
+ 0.3
V
351Ω
CC
Unit
R2
CC
pF
pF
+ 0.5V
Unit
mA
mA
mA
mA
µA
µA
V
V
V
V
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