CY7C1061AV33-12ZXCT Cypress Semiconductor Corp, CY7C1061AV33-12ZXCT Datasheet - Page 6

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CY7C1061AV33-12ZXCT

Manufacturer Part Number
CY7C1061AV33-12ZXCT
Description
CY7C1061AV33-12ZXCT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1061AV33-12ZXCT

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
16M (1M x 16)
Speed
12ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document #: 38-05256 Rev. *G
Switching Waveforms
Write Cycle No. 1 (CE
Write Cycle No. 2 (WE Controlled, OE LOW)
Notes
15. Data IO is high impedance if OE, or BHE or BLE or both = V
16. If CE
17. During this period, the IOs are in output state and input signals should not be applied.
ADDRESS
ADDRESS
BHE/BLE
BHE/BLE
DATA IO
DATA IO
1
goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
CE
CE
CE
CE
WE
WE
OE
1
2
1
2
NOTE 17
NOTE 17
1
or CE
(continued)
t
2
SA
Controlled)
t
HZOE
t
HZWE
[15, 16]
t
SA
[15, 16]
IH
.
t
AW
t
AW
t
t
BW
SCE
t
t
WC
WC
t
PWE
t
BW
VALID DATA
t
t
PWE
SD
t
VALID DATA
SCE
t
SD
t
HD
t
t
HA
t
HA
LZWE
t
HD
CY7C1061AV33
Page 6 of 10
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