CY7C1350G-200AXI Cypress Semiconductor Corp, CY7C1350G-200AXI Datasheet - Page 11

• Manufacturer Part Number: CY7C1350G-200AXI
• Description: CY7C1350G-200AXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1350G-200AXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4.5M (128K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05524 Rev. *F
Switching Waveforms
NOP, STALL, and DESELECT Cycles
ZZ Mode Timing
Notes:
22. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrates CEN being used to create a pause. A write is not performed during this cycle.
23. Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device.
24. DQs are in high-Z when exiting ZZ sleep mode.
In-Out (DQ)
ADDRESS
ADV/LD
BW
Data
CEN
CLK
WE
[A:D]
CE
ALL INPUTS
(except ZZ)
Outputs (Q)
I
WRITE
D(A1)
SUPPLY
A1
CLK
1
[23, 24]
ZZ
(continued)
Q(A2)
READ
A2
2
t ZZI
t ZZ
I
[19, 20, 22]
DDZZ
STALL
3
DON’T CARE
D(A1)
READ
Q(A3)
A3
4
Q(A2)
WRITE
DON’T CARE
D(A4)
A4
5
High-Z
UNDEFINED
STALL
6
Q(A3)
NOP
7
DESELECT or READ Only
t RZZI
t ZZREC
D(A4)
READ
Q(A5)
A5
8
DESELECT
CY7C1350G
9
Page 11 of 15
CONTINUE
DESELECT
Q(A5)
10
t
CHZ
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