STPS10H100CT STMicroelectronics, STPS10H100CT Datasheet - Page 2

• Manufacturer Part Number: STPS10H100CT
• Description: DIODE SCHOTTKY 100V 5A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STPS10H100CT

• Voltage - Forward (vf) (max) @ If: 730mV @ 5A
• Current - Reverse Leakage @ Vr: 3.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-7542-5; STPS10H100CT

Fig. 1: Average forward power dissipation versus
average forward current (per diode).
STPS10H100CT/CG/CR/CFP
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2/7
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
To evaluate the maximum conduction losses use the following equation :
P = 0.51 x I
Symbol
Symbol
R
R
Tj(diode 1) = P(diode1) x R
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
R
R
V
PF(av)(W)
th (j-c)
th (j-c)
I
th (c)
th (c)
R
F
**
*
F(AV)
Junction to case
Junction to case
* tp = 5 ms, < 2%
** tp = 380 µs, < 2%
Reverse leakage current
Forward voltage drop
= 0.05
+ 0.02 x I
Parameter
= 0.1
IF(av) (A)
F
2
(RMS)
= 0.2
th(j-c)
(Per diode) + P(diode 2) x R
= 0.5
=tp/T
D2PAK / I2PAK
TO-220AB
TO-220FPAB
Parameter
Tj = 25°C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
T
= 1
Tests conditions
tp
Fig. 2: Average forward current versus ambient
temperature ( =0.5, per diode).
6
5
4
3
2
1
0
0
IF(av)(A)
V
I
I
F
F
R
= 5 A
= 10 A
= V
25
th(c)
RRM
Per diode
Total
Coupling
Per diode
Total
Coupling
50
Min.
D²PAK/I²PAK/TO-220AB
75
Tamb(°C)
Typ.
0.57
0.66
TO-220FPAB
1.3
100
Value
Rth(j-a)=15°C/W
2.2
1.3
0.3
4.5
3.5
2.5
125
Max.
0.73
0.61
0.85
0.71
3.5
4.5
Rth(j-a)=Rth(j-c)
150
°C/W
°C/W
Unit
Unit
mA
µA
V
175