STPS10H100CT STMicroelectronics, STPS10H100CT Datasheet - Page 4

• Manufacturer Part Number: STPS10H100CT
• Description: DIODE SCHOTTKY 100V 5A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STPS10H100CT

• Voltage - Forward (vf) (max) @ If: 730mV @ 5A
• Current - Reverse Leakage @ Vr: 3.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-7542-5; STPS10H100CT

Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
100.0
STPS10H100CT/CG/CR/CFP
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
4/7
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
10.0
1.0
0.1
0.0
0
IR(µA)
IFM(A)
10
0.2
Typical values
20
Tj=150°C
0.4
30
Tj=150°C
Tj=125°C
Tj=25°C
Tj=100°C
40
Typical values
0.6
Tj=125°C
VR(V)
50
VFM(V)
0.8
60
Tj=25°C
Tj=125°C
70
1.0
80
1.2
90 100
1.4
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1000
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm)
80
70
60
50
40
30
20
10
100
0
10
Rth(j-a) (°C/W)
0
1
C(pF)
2
2
4
6
5
8
S(Cu) (cm²)
VR(V)
10
10
12
20
14
16
50
F=1MHz
Tj=25°C
18
100
20