Z0103NA NXP Semiconductors, Z0103NA Datasheet - Page 10

• Manufacturer Part Number: Z0103NA
• Description: Triacs BULKSL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of Z0103NA

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 8.5 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 7 mA
• Forward Voltage Drop: 1.6 V @ 1 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Z0103NA,412

Philips Semiconductors
8. Revision history
Table 6:
9397 750 10102
Product data
Rev Date
02
01
20020912
20020411
Revision history
CPCN
-
Description
Product data; supersedes data of 11 April 2002
Product data; initial version (9397 750 09419)
Table 5 “Characteristics”
Rev. 02 — 12 September 2002
Addition of dV
com
/dt data. Correction to dV
Z0103/07/09 series
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
D
/dt data
10 of 12
Triacs