Z0103NA NXP Semiconductors, Z0103NA Datasheet - Page 6

• Manufacturer Part Number: Z0103NA
• Description: Triacs BULKSL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of Z0103NA

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 8.5 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 7 mA
• Forward Voltage Drop: 1.6 V @ 1 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Z0103NA,412

Philips Semiconductors
9397 750 10102
Product data
Fig 6. On-state current as a function of on-state
Fig 8. Normalized holding current as a function of
(A)
I T
a
voltage; typical and maximum values.
2
junction temperature; typical values.
6
0
3
8
4
1
2
0
-50
a
0
=
------------------- -
I
H 25 C
I
H
0
1
125 C
max
50
125 C
typ
2
25 C
max
100
V T (V)
003aaa202
003aaa204
T j ( C)
Rev. 02 — 12 September 2002
150
3
Fig 7. Normalized latching current as a function of
Fig 9. Normalized gate trigger current as a function of
a
a
a
=
3
2
4
3
2
1
junction temperature; typical values.
1
junction temperature; typical values.
0
0
a
-50
-50
------------------ -
I
L 25 C
=
I
L
---------------------- -
I
GT 25 C
I
Z0103/07/09 series
GT
0
0
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
50
50
T2+ G+
T2+ G-
T2- G+
T2- G-
100
100
003aaa205
T j ( C)
003aaa203
T j ( C)
150
150
Triacs
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