BSR56 T/R NXP Semiconductors, BSR56 T/R Datasheet - Page 3

• Manufacturer Part Number: BSR56 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BSR56 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 40 V
• Gate-source Breakdown Voltage: - 40 V
• Maximum Drain Gate Voltage: 40 V
• Continuous Drain Current: 50 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSR56,215

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Notes
1. Mounted on a ceramic substrate of 8 mm
CHARACTERISTICS
T
April 1991
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Forward gate current
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient (note 1)
Gate-source cut-off current
Drain cut-off current
Drain current
Gate-source breakdown voltage
Gate-source cut-off voltage
Drain-source voltage (on)
Drain-source resistance (on) at f = 1 kHz
Feedback capacitance at f = 1 MHz
j
= 25 C unless otherwise specified
N-channel FETs
I
V
V
V
I
I
I
I
D
D
D
D
D
I
V
DS
DS
DS
G
= 0,5 nA; V
= 20 mA; V
= 10 mA; V
= 5 mA; V
= 0; V
GS
= 1 A; V
= 0 V; V
= 15 V; V
= 15 V; V
= 10 V; V
GS
= 0; T
DS
DS
GS
GS
GS
GS
GS
GS
DS
= 0
= 15 V
= 0
= 0
= 0
= 20 V
= 0
= 10 V
a
= 0
= 25 C
amb
= 40 C (note 1)
10 mm
I
V
V
V
r
C
DSS
ds on
V
V
0.7 mm.
DSon
DSon
DSon
rss
(BR)GSS
(P)GS
3
I
DSX
BSR56
I
GSS
V
I
P
T
T
R
BSR56; BSR57; BSR58
GF
V
stg
j
DGO
tot
th j-a
V
750
GSO
50
40
10
25
DS
4
5
BSR57
max.
max.
100
500
20
40
40
2
6
5
max.
max.
max.
max.
max.
max.
=
Product specification
65 to 150
BSR58
400 mV
1.0 nA
1.0 nA
0.8 V
80 mA
40 V
60
250 mW
150
430 K/W
8 mA
4 V
5 pF
40 V
40 V
40 V
50 mA
mV
mV
C
C