PMBFJ112 T/R NXP Semiconductors, PMBFJ112 T/R Datasheet - Page 6

• Manufacturer Part Number: PMBFJ112 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ112 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 40 V
• Gate-source Breakdown Voltage: - 40 V
• Maximum Drain Gate Voltage: - 40 V
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PMBFJ112,215

Philips Semiconductors
10. Revision history
Table 8:
9397 750 13402
Product data sheet
Document ID
PMBFJ111_112_113_
3
Modifications:
PMBFJ111_112_113_
CNV_2
Revision history
Release date Data sheet status
20040804
19971201
•
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Table 3
“Marking”: added new marking codes
Product data sheet
Product specification -
PMBFJ111; PMBFJ112; PMBFJ113
Rev. 03 — 4 August 2004
Change notice Order number
-
9397 750 13402
not applicable
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
N-channel junction FETs
Supersedes
PMBFJ111_112_113_
CNV_2
-
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