BFT46 T/R NXP Semiconductors, BFT46 T/R Datasheet - Page 2

• Manufacturer Part Number: BFT46 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFT46 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: 25 V
• Continuous Drain Current: 10 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFT46,215

NXP Semiconductors
DESCRIPTION
Symmetrical n-channel silicon
epitaxial planar junction field-effect
transistor in a microminiature plastic
envelope. The transistor is intended
for low level general purpose
amplifiers in thick and thin-film
circuits.
PINNING
Note : Drain and source are
interchangeable.
QUICK REFERENCE DATA
December 1997
1 = drain
2 = source
3 = gate
Drain-source voltage
Gate-source voltage (open drain)
Total power dissipation up to T
Drain current
Transfer admittance (common source)
Equivalent noise voltage
N-channel silicon FET
V
I
V
D
DS
DS
= 0,2 mA; V
= 10 V; V
= 10 V; I
D
GS
DS
= 200 A; B = 0,6 to 100 Hz
= 0
= 10 V; f = 1 kHz
amb
= 40 C
Marking code
BFT46 = M3p
handbook, halfpage
Fig.1 Simplified outline and symbol, SOT23.
2
Top view
1
3
V
V
P
I
 y
V
2
DSS
tot
n
fs
DS
GSO

g
MAM385
Product specification
d
s
max.
max.
max.




250 mW
BFT46
0,2 mA
1,5 mA
0,5 mS
0,5 V
25 V
25 V