BFT46 T/R NXP Semiconductors, BFT46 T/R Datasheet - Page 4

• Manufacturer Part Number: BFT46 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFT46 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: 25 V
• Continuous Drain Current: 10 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFT46,215

NXP Semiconductors
December 1997
handbook, full pagewidth
handbook, halfpage
N-channel silicon FET
(mW)
(mA)
P tot
1.25
0.75
0.25
300
200
100
I D
1.5
0.5
0
−1.25
1
0
0
V GS (V)
Fig.2 Power derating curve.
40
−1
80
−0.75
120
Fig.3 Typical values. V
160
max
T amb (°C)
−0.5
MDA245
200
−0.25
typ
4
min
DS
= 10 V; T
0
j
= 25 C.
5
V GS = 0 V
10
− 0.1 V
− 0.2 V
− 0.3 V
− 0.4 V
15
Product specification
V DS (V)
MDA272
BFT46
20