BLF6G20LS-75 NXP Semiconductors, BLF6G20LS-75 Datasheet

RF MOSFET Small Signal LDMOS TNS

BLF6G20LS-75

Manufacturer Part Number
BLF6G20LS-75
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G20LS-75

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.235 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
18 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G20LS-75,112

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1. Product profile
CAUTION
1.1 General description
1.2 Features
75 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
RF performance at T
I
I
I
I
I
I
I
I
I
Mode of operation
CW
GSM EDGE
BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
Rev. 02 — 9 February 2009
Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply
voltage of 28 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
N
N
N
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 29.5 W
Gain = 19 dB
Efficiency = 37.5 %
ACPR
ACPR
EVM
Typical performance
rms
400k
600k
= 1.7 %
= 61.5 dBc
= 73 dBc
case
f
(MHz)
1930 to 1990
1930 to 1990
= 25 C in a common source class-AB production test circuit.
Dq
of 550 mA:
V
(V)
28
28
DS
P
(W)
63
29.5
L(AV)
G
(dB) (%)
19
19
p
52
37.5
D
ACPR
(dBc)
-
61.5
400k
Product data sheet
ACPR
(dBc)
-
73
600k
EVM
(%)
-
1.7
rms

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BLF6G20LS-75 Summary of contents

Page 1

... BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor Rev. 02 — 9 February 2009 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. RF performance at T Mode of operation CW GSM EDGE CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...

Page 2

... I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pin BLF6G20-75 (SOT502A BLF6G20LS-75 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G20-75 BLF6G20LS-75 4 ...

Page 3

... D ACPR 400k ACPR 600k EVM rms EVM M 7.1 Ruggedness in class-AB operation The BLF6G20-75 and BLF6G20LS-75 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G20-75_BLF6G20LS-75_2 Product data sheet BLF6G20-75; BLF6G20LS-75 Thermal characteristics Conditions thermal resistance ...

Page 4

... NXP Semiconductors 7.2 One-tone CW Fig 1. 7.3 Two-tone CW Fig 2. BLF6G20-75_BLF6G20LS-75_2 Product data sheet BLF6G20-75; BLF6G20LS- (dB 550 mA 1990 MHz One-tone CW power gain and drain efficiency as functions of load power; typical values (dB 550 mA 1989.95 MHz Two-tone CW power gain and drain efficiency as functions of peak envelope load power ...

Page 5

... 550 mA 1990 MHz Fig 5. GSM-EDGE power gain and drain efficiency as functions of average load power; typical values BLF6G20-75_BLF6G20LS-75_2 Product data sheet BLF6G20-75; BLF6G20LS-75 001aah676 IMD3 (dBc) IMD3 IMD5 IMD7 120 180 P (W) L(PEP) = 1989.95 MHz; 1 (1) 450 MHz (2) 500 MHz (3) 550 MHz ...

Page 6

... GSM EDGE RMS EVM and peak EVM as functions of average load power; typical values 8. Test information input 50 C1 See Table 8 for list of components. Fig 9. Test circuit for operation at 1990 MHz BLF6G20-75_BLF6G20LS-75_2 Product data sheet BLF6G20-75; BLF6G20LS-75 001aah680 52 M ACPR 400k (dBc EVM rms (W) L(AV ...

Page 7

... C5 multilayer ceramic chip capacitor C7 tantalum capacitor C12 multilayer ceramic chip capacitor C13 electrolytic capacitor R1 Philips chip resistor [1] American Technical Ceramics type 100B or capacitor of same quality. BLF6G20-75_BLF6G20LS-75_2 Product data sheet BLF6G20-75; BLF6G20LS- Figure 9 and Figure 10) Value ...

Page 8

... UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLF6G20-75_BLF6G20LS-75_2 Product data sheet BLF6G20-75; BLF6G20LS- scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...

Page 9

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLF6G20-75_BLF6G20LS-75_2 Product data sheet BLF6G20-75; BLF6G20LS- scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 10

... Wideband Code Division Multiple Access Release date Data sheet status Product data sheet • The document now describes both the eared and earless version of this product: BLF6G20-75 and BLF6G20LS-75 respectively • Table 7 on page 3: changed the minimum value for • Table 7 on page 3: changed the maximum value for EVM • ...

Page 11

... For more information, please visit: For sales office addresses, please send an email to: BLF6G20-75_BLF6G20LS-75_2 Product data sheet BLF6G20-75; BLF6G20LS-75 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 12

... NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G20-75_BLF6G20LS-75_2 Power LDMOS transistor All rights reserved. Date of release: 9 February 2009 ...

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